Redox‐Active Vanadium‐Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory-Reference-Cited by-同舟云学术

Redox‐Active Vanadium‐Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory

Published:2020-08-06 Issue:18 Volume:217 Page:2000306
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

N. S. Sterin¹,Basu Nivedita²,Cahay Marc³,M. N. Satyanarayan⁴,Mal Sib Sankar⁵,Das Partha Pratim¹^ORCID

Affiliation:

1. Low Dimensional Physics Laboratory Department of Physics National Institute of Technology Mangalore 575025 Karnataka India

2. Centre for Nano Science and Engineering Indian Institute of Science Bangalore 560012 India

3. Spintronics and Vacuum Nanoelectronics Laboratory University of Cincinnati Cincinnati OH 45040 USA

4. Optoelectronics Laboratory Department of Physics National Institute of Technology Mangalore 575025 Karnataka India

5. Materials and Catalysis Laboratory Department of Chemistry National Institute of Technology Mangalore 575025 Karnataka India

Funder

Science and Engineering Research Board

Council of Scientific and Industrial Research, India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000306

Reference80 articles.

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4. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

5. Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

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