Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem-Reference-Cited by-同舟云学术

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Published:2017-07-10 Issue:34 Volume:29 Page:1701907
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhao Qiang¹²,Wang Hanlin¹²,Ni Zhenjie¹,Liu Jie³,Zhen Yonggang¹,Zhang Xiaotao³,Jiang Lang¹,Li Rongjin³,Dong Huanli¹,Hu Wenping¹³^ORCID

Affiliation:

1. Beijing National Laboratory for Molecular Sciences; Key Laboratory of Organic Solids; Institute of Chemistry; Chinese Academy of Sciences; Beijing 100190 China

2. School of Chemistry and Chemical Engineering; University of Chinese Academy of Sciences; Beijing 100049 China

3. Tianjin Key Laboratory of Molecular Optoelectronic Sciences; Department of Chemistry; School of Science; Tianjin University Collaborative Innovation Center of Chemical Science and Engineering; Tianjin 300072 China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. 25th Anniversary Article: High-Mobility Hole and Electron Transport Conjugated Polymers: How Structure Defines Function

2. 25th Anniversary Article: Key Points for High‐Mobility Organic Field‐Effect Transistors

3. High mobility emissive organic semiconductor