Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies-Reference-Cited by-同舟云学术

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

Published:2017-01-11 Issue:10 Volume:29 Page:1602976
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Li Chao¹,Gao Bin²,Yao Yuan¹,Guan Xiangxiang¹³,Shen Xi¹,Wang Yanguo¹,Huang Peng²,Liu Lifeng²,Liu Xiaoyan²,Li Junjie¹,Gu Changzhi¹,Kang Jinfeng²,Yu Richeng¹³

Affiliation:

1. Beijing National Laboratory of Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 P. R. China

2. Institute of Microelectronics; Peking University; Beijing 100871 P. R. China

3. School of Physical Sciences; University of Chinese Academy of Sciences; Beijing 100049 P. R. China

Funder

National key research program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference43 articles.

1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films

2. Nanoionics-based resistive switching memories

3. Resistive switching in transition metal oxides

4. Metal–Oxide RRAM

5. Memristive devices for computing

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