Affiliation:
1. Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials College of Chemistry Fuzhou University Fuzhou Fujian 350108 P. R. China
2. Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals College of Chemical Engineering Fuzhou University Fuzhou Fujian 350108 P. R. China
3. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
Abstract
AbstractThe coming big‐data era has created a huge demand for next‐generation memory technologies with characters of higher data‐storage densities, faster access speeds, lower power consumption and better environmental compatibility. In this field, the design of resistive switching active materials is pivotal but challengeable. Polyoxometalates (POMs) are promising candidates for next‐generation molecular memristors due to their versatile redox characters, excellent electron reservoirs and good compatibility/convenience in microelectronics processing. In this review, five kinds of POM‐based active materials in nonvolatile memories (inorganic POMs, crystalline organic‐inorganic hybrid POMOFs, polymer modified POMs, POM/transition metal oxides composites and the deposition of POM on metal surfaces) were described. The components of POMs active materials, device fabrications, device parameters, and resistive switching mechanisms relative to their structures were summarized. Finally, challenges and future perspectives of POMs‐based memristors were also presented.