Affiliation:
1. Fraunhofer IAF Fraunhofer Institute for Applied Solid State Physics 79108 Freiburg Germany
2. Institute of Robust Power Semiconductor Systems University of Stuttgart 70569 Stuttgart Germany
Funder
Bundesministerium für Bildung und Forschung
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference60 articles.
1. Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
2. The 2018 GaN power electronics roadmap
3. S. G.Pytel S.Lentijo A.Koudymov S.Rai H.Fatima V.Adivarahan A.Chitnis J.Yang J. L.Hudgins E.Santi M.Monti G.Simin M. A.Khan inIEEE 35th Annual Power Electronics Specialists Conf. IEEE Aachen Germany2004 pp.579–584.
4. Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT
5. Y.Uemoto T.Morita A.Ikoshi H.Umeda H.Matsuo J.Shimizu M.Hikita M.Yanagihara T.Ueda T.Tanaka D.Ueda inIEEE Int. Electron Devices Meeting IEEE Baltimore MD 2009 pp.1–4.
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