Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology-Reference-Cited by-同舟云学术

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Published:2018-04 Issue:4 Volume:11 Page:681-688
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Reiner Richard¹,Waltereit Patrick¹,Weiss Beatrix¹,Moench Stefan²,Wespel Matthias¹,Müller Stefan¹,Quay Rüdiger¹,Ambacher Oliver³

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF)Tullastrasse 72D‐79108FreiburgGermany

2. Institute of Robust Power Semiconductor Systems (ILH)University of StuttgartPfaffenwaldring 47D‐70550StuttgartGermany

3. Department of Sustainable Systems Engineering (INATECH)University of FreiburgEmmy‐Noether‐Str. 2D‐79110FreiburgGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0397

Reference46 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. GaN Power Transistors on Si Substrates for Switching Applications

3. 2013 Proc. CSICS R. Reiner P. Waltereit F. Benkhelifa Benchmarking of large‐area GaN‐on‐Si HFET power devices for highly‐efficient fast‐switching converter applications 1 4

4. 2014 Proc. WiPDA E.A. Jones F. Wang B. Ozpineci Application‐based review of GaN HFETs 24 29

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