Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg,Germany,79108
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509173.pdf?arnumber=10509173
Reference24 articles.
1. Lateral GaN Power Devices and Integrated GaN Power Circuits: Status and Recent Progress;Reiner
2. A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency
3. Planar GaN Power Integration – The World is Flat
4. GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions
5. Extended Monolithic Integration Levels for Highly Functional GaN Power ICs;Basler,2023
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