Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT-Reference-Cited by-同舟云学术

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Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

Published:2009-05 Issue:5 Volume:30 Page:430-432
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wanjun Chen ,King-Yuen Wong ,Chen K.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4850262/04808201.pdf?arnumber=4808201

Cited by 106 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers;physica status solidi (a);2024-01-16

2. A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor;IEEE Transactions on Electron Devices;2024-01

3. The ESD Behavior of D-Mode GaN MIS-HEMT;IEEE Transactions on Electron Devices;2023-12

4. A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time Control;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

5. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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