Three-Phase Motor Inverter and Current Sensing GaN Power IC

Author:

Mönch Stefan1ORCID,Reiner Richard1ORCID,Basler Michael1ORCID,Grieshaber Daniel1,Benkhelifa Fouad1ORCID,Waltereit Patrick1,Quay Rüdiger12ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany

2. Department of Sustainable Systems Engineering (INATECH), University of Freiburg, 79110 Freiburg, Germany

Abstract

A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

Funder

Vector Stiftung

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference71 articles.

1. Wattenberg, M., Jones, E.A., and Sanchez, J. (2021, January 4–6). A Low-Profile GaN-Based Integrated Motor Drive for 48V FOC Applications. Proceedings of the PCIM Europe Digital Days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany.

2. Reusch, D., Strydom, J., and Lidow, A. (2015, January 15–19). A new family of GaN transistors for highly efficient high frequency DC-DC converters. Proceedings of the 2015 IEEE Applied Power Electronics Conference (APEC), Charlotte, NC, USA.

3. Efficient Power Conversion Corporation (2023, June 08). How2AppNote 017 Design Compact Low-Voltage BLDC Motor Drive Inverter GaN ePower Stage. Available online: https://epc-co.com/epc/Portals/0/epc/documents/application-notes/How2AppNote017%20Design%20Compact%20Low-voltage%20BLDC%20Motor%20Drive%20Inverter%20GaN%20ePower%20Stage.pdf.

4. Weiss, B. (2017). Fast-Switching Monolithically Integrated High-Voltage GaN-on-Si Power Converters. [Ph.D. Thesis, Albert-Ludwigs-Universität Freiburg].

5. Mönch, S., Basler, M., Reiner, R., Benkhelifa, F., Döring, P., Sinnwell, M., Müller, S., Mikulla, M., Waltereit, P., and Quay, R. (2023). e-Prime—Advances in Electrical Engineering, Electronics and Energy, Elsevier.

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