Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps-Reference-Cited by-同舟云学术

Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

Published:2021-07-21 Issue:23 Volume:218 Page:2100108
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

De Guzman Joyce Ann T.¹^ORCID,Markevich Vladimir P.¹,Hawkins Ian D.¹,Ayedh Hussein M.²,Coutinho José³,Binns Jeff⁴,Falster Robert⁵,Abrosimov Nikolay V.⁶,Crowe Iain F.¹,Halsall Matthew P.¹,Peaker Anthony R.¹

Affiliation:

1. Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK

2. Department of Electronics and Nanoengineering Aalto University Tietotie 3 FI-02150 Espoo Finland

3. I3N and Department of Physics University of Aveiro Campus Santiago Aveiro 3810-193 Portugal

4. Semiconductor and Device Research Nexcel Electronic Technology Gresham 97030 OR USA

5. 4 Harrison's Lane Woodstock OX20 1SS UK

6. Leibniz-Institut für Kristallzüchtung (IKZ) Max‐Born‐Straße 2 12489 Berlin Germany

Funder

Fundo Regional para a Ciência e Tecnologia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100108

Reference60 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

2. Light-induced degradation in indium-doped silicon

3. ASi-Sii-defect Model of Light-induced Degradation in Silicon

4. Activation energies of the In _Si ‐Si _i defect transitions obtained by carrier lifetime measurements

5. P-Type Indium-Doped Passivated Emitter Rear Solar Cells (PERC) on Czochralski Silicon Without Light-Induced Degradation

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1. The A _Si –Si _i Defect Model of Light‐Induced Degradation (LID) in Silicon: A Discussion and Review;physica status solidi (a);2022-08-16

2. Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer;Journal of Applied Physics;2021-12-28