Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer-Reference-Cited by-同舟云学术

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

Published:2021-12-28 Issue:24 Volume:130 Page:245703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

de Guzman Joyce Ann T.¹^ORCID,Markevich Vladimir P.¹^ORCID,Hawkins Ian D.¹^ORCID,Coutinho José²^ORCID,Ayedh Hussein M.³^ORCID,Binns Jeff⁴^ORCID,Abrosimov Nikolay V.⁵^ORCID,Lastovskii Stanislau B.⁶^ORCID,Crowe Iain F.¹^ORCID,Halsall Matthew P.¹^ORCID,Peaker Anthony R.¹^ORCID

Affiliation:

1. Photon Science Institute and Department of EEE, The University of Manchester, Manchester M13 9PL, United Kingdom

2. Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal

3. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150 Espoo, Finland

4. Nexcel Electronic Technology, Gresham, 97030 Oregon, USA

5. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Straᶔe 2, 12489 Berlin, Germany

6. Scientific-Practical Materials Research Center of National Academy of Sciences of Belarus, Minsk 220072, Belarus

Funder

Engineering and Physical Sciences Research Council

Fundacao para a Ciencia e a Technologia [Portugal]

Department of Science and Technology [Philippines]

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076980

Reference24 articles.

1. Model for the Electronic Structure of Amorphous Semiconductors

2. G. D. Watkins, in Advances in Solid State Physics, edited by P. Grosse (Springer, Berlin, 1984), pp. 163–189.

3. Characterisation of negative-U defects in semiconductors

4. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

5. Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Explicit Photogain Theory for Nanowire Photoconductors Validated by TCAD Software Simulations;IEEE Transactions on Electron Devices;2023-07

2. Deep-level defects in Ga-doped silicon crystals;SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS;2023

3. Spectroscopic Investigation of Shallow Hole Traps in Ga- and B-doped Czochralski Silicon: Insight into Light-Induced Degradation;ACS Applied Energy Materials;2022-11-07

4. Defects in semiconductors;Journal of Applied Physics;2022-10-21

5. Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon;physica status solidi (a);2022-05-29