Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon-Reference-Cited by-同舟云学术

Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon

Published:2022-05-29 Issue:17 Volume:219 Page:2200176
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Abdul Fattah Tarek O.¹^ORCID,Markevich Vladimir P.¹,De Guzman Joyce Ann T.²,Coutinho José³,Lastovskii Stanislau B.⁴,Hawkins Ian D.¹,Crowe Iain F.¹,Halsall Matthew P.¹,Peaker Anthony R.¹

Affiliation:

1. Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester Manchester M13 9PL UK

2. Philippine Council for Industry, Energy, and Emerging Technology Research and Development Department of Science and Technology (DOST) Taguig City Metro Manila 1631 Philippines

3. I3N and Department of Physics University of Aveiro 3810-193 Aveiro Portugal

4. Scientific-Practical Materials Research Center NAS of Belarus Minsk 220072 Belarus

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200176

Reference37 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

2. Degradation of Crystalline Silicon Due to Boron–Oxygen Defects

3. Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

4. Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem

5. Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

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