Activation energies of the In Si ‐Si i defect transitions obtained by carrier lifetime measurements-Reference-Cited by-同舟云学术

Activation energies of the In _Si ‐Si _i defect transitions obtained by carrier lifetime measurements

Published:2017-02-21 Issue:5 Volume:14 Page:1600033
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Lauer Kevin¹,Möller Christian¹,Teßmann Christopher¹²,Schulze Dirk²,Abrosimov Nikolay V.³

Affiliation:

1. CiS Forschungsinstitut für Mikrosensorik GmbHKonrad‐Zuse‐Str. 1499099ErfurtGermany

2. TU Ilmenau, Institut für PhysikWeimarer Str. 3298693IlmenauGermany

3. Leibniz‐Institut für KristallzüchtungMax‐Born‐Str. 212489BerlinGermany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201600033

Reference49 articles.

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4. The nature of boron-oxygen lifetime-degrading centres in silicon

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