P-18: High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure-Reference-Cited by-同舟云学术

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P-18: High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure

Published:2016-05 Issue:1 Volume:47 Page:1183-1185
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Yeh Bo-Liang¹,Lin Chun-Nan¹,Liu Kuan-Hsien²,Chang Ting-Chang³

Affiliation:

1. Array/CF Technology Development Div. AU Optronics, Science-Based Industrial Park, Hsinchu, Taiwan

2. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

Publisher

Wiley

Reference7 articles.

1. Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells;Rodbell;Trans. Nucl. Sci.,2007

2. Developments in nanocrystal memory;Chang;Mater. Today,2011

3. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor;Teng;Appl. Phys. Lett.,2012

4. Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor;Tsai;Appl. Phys. Lett.,2010

5. Poly-Si nanowire nonvolatile memory with nanocrystal Indium-Gallium-Zinc-Oxide charge-trapping layer;Chen;IEEE Electron Device Lett.,2010

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