Tunable Optoelectronic Properties of WS 2 by Local Strain Engineering and Folding-Reference-Cited by-同舟云学术

Tunable Optoelectronic Properties of WS 2 by Local Strain Engineering and Folding

Published:2020-02-28 Issue:4 Volume:6 Page:1901381
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Khan Ahmed Raza¹²^ORCID,Lu Teng³,Ma Wendi¹,Lu Yuerui¹^ORCID,Liu Yun¹³

Affiliation:

1. Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceAustralian National University ACT 2601 Canberra Australia

2. Department of Industrial and Manufacturing EngineeringUniversity of Engineering and Technology (Rachna College) Lahore 54700 Pakistan

3. Research School of ChemistryAustralian National University ACT 2601 Canberra Australia

Funder

Australian National University

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201901381

Reference68 articles.

1. Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers

2. Strain engineering of Schottky barriers in single- and few-layer MoS 2 vertical devices

3. Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

4. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

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