Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances-Reference-Cited by-同舟云学术

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Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

Published:2013-10 Issue:10 Volume:34 Page:1328-1330
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Du Yuchen,Liu Han,Neal Adam T.,Si Mengwei,Ye Peide D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6606835/06585740.pdf?arnumber=6585740

Cited by 234 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts;Scientific Reports;2024-09-08

2. Synthesis of Ultrathin MoO2 Nanosheets via Chemical Vapor Deposition and Their Application to High-Performance Field-Effect Transistors;Electronic Materials Letters;2024-07-27

3. High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers;ACS Applied Materials & Interfaces;2024-07-01

4. UV-Ozone-Assisted Solution-Processed High-k ZrO₂for MoS₂ Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-04

5. Surface Wettability-Mediated Enhancement of Hydrogen Evolution Reaction Performance in Electron-Doped MoS₂ Monolayers;ACS Applied Energy Materials;2024-03-25

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