Strain engineering of Schottky barriers in single- and few-layer MoS 2 vertical devices-Reference-Cited by-同舟云学术

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Strain engineering of Schottky barriers in single- and few-layer MoS 2 vertical devices

Published:2017-01-25 Issue:2 Volume:4 Page:021006
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Quereda Jorge,Palacios Juan José,Agräit Nicolás,Castellanos-Gomez Andres,Rubio-Bollinger Gabino

Funder

BBVA Foundation

MICINN/MINECO

Comunidad Autónoma de Madrid

Generalitat Valenciana

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa5920/pdf

Reference44 articles.

1. Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

2. Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering

3. Strain-engineered artificial atom as a broad-spectrum solar energy funnel

4. Effects of strain on electronic properties of graphene

5. Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

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1. Strain-induced activation of chiral-phonon emission in monolayer WS2;npj 2D Materials and Applications;2024-07-04

2. Electrically Controlled High Sensitivity Strain Modulation in MoS₂ Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates;Nano Letters;2024-07-01

3. Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe₂;Advanced Electronic Materials;2024-06-28

4. Manipulating 2D Materials through Strain Engineering;Small;2024-05-31

5. Cu⁺ Migration and Resultant Tunable Rectification in CuInP₂S₆;ACS Applied Electronic Materials;2023-09-18

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