Far-Reaching Remote Doping for Monolayer MoS<sub>2</sub> Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness-Reference-Cited by-同舟云学术

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Far-Reaching Remote Doping for Monolayer MoS₂ Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness

Published:2024-08-09 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Rong Kaipeng¹^ORCID,Noro Ryosuke²,Nishigaki Hayato²,Ding Mingda²^ORCID,Yao Yao²^ORCID,Inoue Taiki²^ORCID,Katayama Ryuji²,Kobayashi Yoshihiro²^ORCID,Matsuda Kazunari³^ORCID,Mouri Shinichiro¹

Affiliation:

1. Graduate School of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

2. Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan

3. Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00880

Reference56 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Electric control of valley polarization in monolayer WSe2 using a van der Waals magnet

4. Engineering Valley Polarization of Monolayer WS 2 : A Physical Doping Approach

5. Defects engineering monolayer MoSe2 magnetic states for 2D spintronic device

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