Engineering Valley Polarization of Monolayer WS 2 : A Physical Doping Approach-Reference-Cited by-同舟云学术

Engineering Valley Polarization of Monolayer WS 2 : A Physical Doping Approach

Published:2019-02-21 Issue:12 Volume:15 Page:1805503
ISSN:1613-6810
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language:en
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Author:

Feng Shun¹,Cong Chunxiao²,Konabe Satoru³,Zhang Jing¹,Shang Jingzhi¹,Chen Yu¹,Zou Chenji¹,Cao Bingchen¹,Wu Lishu¹,Peimyoo Namphung¹,Zhang Baile¹,Yu Ting¹^ORCID

Affiliation:

1. Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University 637371 Singapore Singapore

2. State Key Laboratory of ASIC & SystemSchool of Information Science and TechnologyFudan University Shanghai 200433 China

3. Department of Chemical Science and TechnologyHosei University Koganei Tokyo 184‐8584 Japan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Ministry of Education - Singapore

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201805503

Reference63 articles.

1. Control of valley polarization in monolayer MoS2 by optical helicity

2. Valley-selective circular dichroism of monolayer molybdenum disulphide

3. Valley polarization in MoS2 monolayers by optical pumping

4. Spin and pseudospins in layered transition metal dichalcogenides

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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