Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields-Reference-Cited by-同舟云学术

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Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields

Published:2016-08-05 Issue:10 Volume:2 Page:1600233
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shin Keun-Young¹,Kim Youngjin¹²,Antolinez Felipe V.³,Ha Jeong Sook²⁴,Lee Sang-Soo¹²,Park Jong Hyuk¹

Affiliation:

1. Photo-Electronic Hybrids Research Center; Korea Institute of Science and Technology; Seoul 02792 Korea

2. KU-KIST Graduate School of Converging Science and Technology; Korea University; Seoul 02841 Korea

3. Optical Materials Engineering Laboratory; ETH Zurich; 8092 Zurich Switzerland

4. Department of Chemical and Biological Engineering; Korea University; Seoul 02841 Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Memristive devices for computing

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Physics of the Switching Kinetics in Resistive Memories

4. Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates

5. Nanoscale resistive memory with intrinsic diode characteristics and long endurance

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