Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates-Reference-Cited by-同舟云学术

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Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates

Published:2014-01-21 Issue:2 Volume:8 Page:1410-1418
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wang Gunuk¹,Raji Abdul-Rahman O.¹,Lee Jae-Hwang¹,Tour James M.¹

Affiliation:

1. Department of Chemistry, ‡Smalley Institute for Nanoscale Science and Technology, §Department of Mechanical Engineering and Materials Science, and ⊥Department of Computer Science, Rice University, 6100 Main Street, Houston, Texas 77005, United States

Funder

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn4052327

Reference51 articles.

1. Nanoionics-based resistive switching memories

2. The missing memristor found

3. Overview of candidate device technologies for storage-class memory

4. Resistive switching in transition metal oxides

5. Emerging memories: resistive switching mechanisms and current status

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5. Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor;The Journal of Physical Chemistry Letters;2021-10-28

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