Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor
Author:
Affiliation:
1. Key Laboratory of Science and Technology on High-Tech Polymer Materials, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
2. University of Chinese Academy of Sciences, Beijing 100149, People’s Republic of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c03031
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1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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