Controllability of the Conductive Filament in Porous SiO<sub><i>x</i></sub> Memristors by Humidity-Mediated Silver Ion Migration-Reference-Cited by-同舟云学术

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Controllability of the Conductive Filament in Porous SiO_x Memristors by Humidity-Mediated Silver Ion Migration

Published:2023-09-22 Issue:39 Volume:15 Page:46449-46459
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Haoze¹,Gao Qin²^ORCID,Gao Juan¹,Huang Jiangshun¹,Geng Xueli¹,Wang Guoxing¹,Liang Bo¹,Li Xinghe¹,Wang Mei¹,Xiao Zhisong¹^ORCID,Chu Paul K.³^ORCID,Huang Anping¹^ORCID

Affiliation:

1. School of Physics, Beihang University, Beijing 100191, China

2. School of Physics and School of Chemistry, Beihang University, Beijing 100191, China

3. Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, China

Funder

City University of Hong Kong

Beijing Academy of Quantum Information Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c07179

Reference37 articles.

1. Memristor-based analogue computing for brain-inspired sound localization with in situ training

2. Thousands of conductance levels in memristors integrated on CMOS

3. Ternary Logic with Stateful Neural Networks Using a Bilayered TaO X ‐Based Memristor Exhibiting Ternary States

4. Homologous gradient heterostructure‐based artificial synapses for neuromorphic computation

5. Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

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