Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐ k Interlayer Dielectrics-Reference-Cited by-同舟云学术

Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐ k Interlayer Dielectrics

Published:2017-09-21 Issue:12 Volume:3 Page:1700116
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Nordell Bradley J.¹,Nguyen Thuong D.¹,Caruso Anthony N.¹,Purohit Sudhaunshu S.²,Oyler Nathan A.²,Lanford William A.³,Gidley David W.⁴,Gaskins John T.⁵,Hopkins Patrick E.⁵,Henry Patrick⁶,King Sean W.⁶,Paquette Michelle M.¹

Affiliation:

1. Department of Physics and Astronomy University of Missouri‐Kansas City Kansas City MO 64110 USA

2. Department of Chemistry University of Missouri‐Kansas City Kansas City MO 64110 USA

3. Department of Physics University at Albany Albany NY 12222 USA

4. Department of Physics University of Michigan Ann Arbor MI 48109 USA

5. Department of Mechanical and Aerospace Engineering University of Virginia Charlottesville VA 22904 USA

6. Logic Technology Development Intel Corporation Hillsboro OR 97124 USA

Funder

Intel Corporation

Defense Threat Reduction Agency

Office of Naval Research

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201700116

Reference49 articles.

1. Advanced Interconnects for ULSI Technology

2. International Technology Roadmap for Semiconductors Interconnect Chapter 2013.

3. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

4. PECVD low and ultralow dielectric constant materials: From invention and research to products

5. Mechanical Stability of Porous Low-k Dielectrics

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling;IEEE Transactions on Electron Devices;2023-04

2. Ab initio study of boron‐rich amorphous boron carbides;Journal of the American Ceramic Society;2023-01-10

3. Ultralow‐ k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform;Advanced Materials Technologies;2022-05-16

4. Room-Temperature Formation of Hard BCx Films by Low Power Magnetron Sputtering;Applied Sciences;2021-10-22

5. DIELECTRIC LAYERS BCxNy: SYNTHESIS BY THE DECOMPOSITION OF VAPORS OF ORGANOBORON COMPOUNDS, COMPOSITION AND CHEMICAL STRUCTURE;Journal of Structural Chemistry;2021-10