Ultralow‐ <i>k</i> Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform-Reference-Cited by-同舟云学术

Ultralow‐ k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Published:2022-05-16 Issue:10 Volume:7 Page:2200022
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv Materials Technologies

Author:

Lin Cheng‐Ming¹^ORCID,Hsu Chuang‐Han¹,Huang Wei‐Yu²,Astié Vincent³,Cheng Po‐Hsien¹,Lin Yue‐Min¹,Hu Wei‐Shan¹,Chen Szu‐Hua¹,Lin Han‐Yu¹,Li Ming‐Yang¹,Magyari‐Kope Blanka¹,Yang Chi‐Ming¹,Decams Jean‐Manuel³,Lee Tzu‐Lih¹,Gui Dong¹,Wang Han¹,Woon Wei‐Yen¹²^ORCID,Lin Pinyen¹,Wu Jeff¹,Lee Jang‐Jung¹,Liao Szuya Sandy¹,Cao Min¹

Affiliation:

1. R&D Taiwan Semiconductor Manufacturing Company Hsinchu 30075 Taiwan, R. O. C

2. Department of Physics National Central University Taoyuan City 320 Taiwan, R. O. C

3. R&D Annealsys Corporate 139 Rue des Walkyries Montpellier 34000 France

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202200022

Reference44 articles.

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2. Reasons for lower dielectric constant of fluorinated SiO2 films

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