Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In 2 O 3 Thin‐Film Transistor-Reference-Cited by-同舟云学术

Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In 2 O 3 Thin‐Film Transistor

Published:2019-04-18 Issue:6 Volume:5 Page:1900125
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

He Jiawei¹,Li Guoli²,Lv Yawei²,Wang Chunlan³,Liu Chuansheng¹,Li Jinchai¹,Flandre Denis²⁴,Chen Huipeng⁵,Guo Tailiang⁵,Liao Lei¹²^ORCID

Affiliation:

1. School of Physics and TechnologyWuhan University Wuhan 430072 China

2. Key Laboratory for Micro‐/Nano‐Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan University Changsha 410082 China

3. School of ScienceXi'an Polytechnic University Xi'an 710048 China

4. Institute of Information and Communication TechnologiesElectronics and Applied MathematicsUniversité catholique de Louvain 1348 Louvain‐la‐Neuve Belgium

5. Institute of Optoelectronic DisplayFuzhou University Fuzhou 350002 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900125

Reference47 articles.

1. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition