Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface-Reference-Cited by-同舟云学术

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

Published:2018-11-22 Issue:5 Volume:5 Page:1800503
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Mao Huiwu¹,Zhou Zhe¹,Wang Xiangjing¹,Ban Chaoyi¹,Ding Yamei¹,Sun Tao¹,Yin Yuhang¹,Liu Zhengdong¹,Liu Juqing¹^ORCID,Huang Wei¹²³

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

2. Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU) 127 West Youyi Rode Xi'an 710072 China

3. Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)SICAMNanjing University of Posts and Telecommunications 9 Wenyuan Road Nanjing 210023 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800503

Reference30 articles.

1. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

2. Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials

3. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage