Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage-Reference-Cited by-同舟云学术

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

Author:

Han Su-Ting¹,Zhou Ye²³,Chen Bo⁴,Wang Chundong⁵,Zhou Li¹,Yan Yan¹,Zhuang Jiaqing¹,Sun Qijun¹,Zhang Hua⁴,Roy V. A. L.¹³

Affiliation:

1. Department of Physics and Materials Science; City University of Hong Kong; Hong Kong SAR China

2. Institute for Advanced Study; Shenzhen University; Shenzhen Guangdong 508060 P. R. China

3. State Key Laboratory of Millimeter Waves; City University of Hong Kong; Hong Kong SAR China

4. School of Materials Science and Engineering; Nanyang Technological University; 639798 Singapore

5. School of Optical and Electronic Information; Huazhong University of Science and Technology; Wuhan 430074 P. R. China

Funder

City University of Hong Kong

NTU

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference39 articles.

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