Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash-Reference-Cited by-同舟云学术

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Published:2015-05-13 Issue:25 Volume:27 Page:3811-3816
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yoon Jung Ho¹,Kim Kyung Min²,Song Seul Ji¹,Seok Jun Yeong¹,Yoon Kyung Jean¹,Kwon Dae Eun¹,Park Tae Hyung¹,Kwon Young Jae¹,Shao Xinglong¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center; Seoul National University; Seoul 151-744 Korea

2. Hewlett-Packard Laboratories; Hewlett-Packard Company; Palo Alto CA 94304 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference23 articles.

1. From Microprocessors to Nanostores: Rethinking Data-Centric Systems

2. Reproducible switching effect in thin oxide films for memory applications

3. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

4. Memristive devices for computing

5. Complementary resistive switches for passive nanocrossbar memories

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