Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout-Reference-Cited by-同舟云学术

Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout

Published:2023-06-01 Issue:12 Volume:6 Page:10590-10598
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zhou Zhe¹^ORCID,Pan Keyuan¹,Zhu Duoyi¹,Qian Xinkai¹,Wang Qiye¹,Yan Shiqi²,Xin Qian²,Dong Xuemei¹,Wu Yueyue¹,Liu Zhengdong¹,Liu Juqing¹^ORCID

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China

2. Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c01538

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5. Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing

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