Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing-Reference-Cited by-同舟云学术

Vacancy‐Induced Synaptic Behavior in 2D WS 2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing

Published:2019-05-02 Issue:24 Volume:15 Page:1901423
ISSN:1613-6810
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language:en
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Author:

Yan Xiaobing¹²^ORCID,Zhao Qianlong¹,Chen Andy Paul²,Zhao Jianhui¹,Zhou Zhenyu¹,Wang Jingjuan¹,Wang Hong¹,Zhang Lei¹,Li Xiaoyan¹,Xiao Zuoao¹,Wang Kaiyang¹,Qin Cuiya¹,Wang Gong¹,Pei Yifei¹,Li Hui¹,Ren Deliang¹,Chen Jingsheng²,Liu Qi³^ORCID

Affiliation:

1. National–Local Joint Engineering Laboratory of New Energy Photovoltaic DevicesKey Laboratory of Digital Medical Engineering of Hebei ProvinceCollege of Electron and Information EngineeringHebei University Baoding 071002 P. R. China

2. Department of Materials Science and EngineeringNational University of Singapore Singapore 117576 Singapore

3. Key Laboratory of Microelectronic Devices & Integrated TechnologyInstitute of MicroelectronicsChinese Academy of Sciences Beijing 100029 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201901423

Reference53 articles.

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2. Memristor-based neural networks

3. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension