Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─A Phase-Field Study
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
Funder
National Science Foundation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00371
Reference57 articles.
1. Metal oxide semiconductors with highly concentrated oxygen vacancies for gas sensing materials: A review
2. Memristive devices for computing
3. Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices
4. Memristive crossbar arrays for brain-inspired computing
5. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
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