Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect-Reference-Cited by-同舟云学术

Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect

Published:2021-09-04 Issue:41 Volume:33 Page:2103656
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Shen Yaqing¹,Zheng Wenwen¹,Zhu Kaichen²,Xiao Yiping¹,Wen Chao¹,Liu Yingwen¹,Jing Xu¹,Lanza Mario³^ORCID

Affiliation:

1. Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

2. MIND Department of Electronic and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona E‐08028 Spain

3. Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

Funder

National Natural Science Foundation of China

State Administration of Foreign Experts Affairs

Higher Education Discipline Innovation Project

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202103656

Reference35 articles.

1. Graphene and two-dimensional materials for silicon technology

2. How 2D semiconductors could extend Moore’s law

3. Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

4. Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

5. Electronic synapses made of layered two-dimensional materials

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