Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors-Reference-Cited by-同舟云学术

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Published:2019-06 Issue:6 Volume:2 Page:230-235
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Illarionov Yury Yu.^ORCID,Banshchikov Alexander G.,Polyushkin Dmitry K.,Wachter Stefan,Knobloch Theresia^ORCID,Thesberg Mischa,Mennel Lukas,Paur Matthias,Stöger-Pollach Michael,Steiger-Thirsfeld Andreas,Vexler Mikhail I.,Waltl Michael,Sokolov Nikolai S.,Mueller Thomas,Grasser Tibor^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-019-0256-8.pdf

Reference60 articles.

1. Guerriero, E. et al. High-gain graphene transistors with a thin AlOx top-gate oxide. Sci. Rep. 7, 2419 (2017).

2. Tao, L. et al. Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 10, 227–231 (2015).

3. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).

4. Chen, X. et al. Large-velocity saturation in thin-film black phosphorus transistors. ACS Nano 12, 5003–5010 (2018).

5. Kang, J., Liu, W. & Banerjee, K. High-performance MoS2 transistors with low resistance molybdenum contacts. Appl. Phys. Lett. 104, 093106 (2014).

Cited by 188 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer‐scale single‐crystal two‐dimensional materials for integrated optoelectronics;InfoScience;2024-08-27

2. Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy;Nature Electronics;2024-08-26

3. Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2;Journal of Vacuum Science & Technology B;2024-08-13

4. Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate;Nature Materials;2024-08-12

5. Controllable Synthesis of Nonlayered Ultrathin Mn3O4 with High Dielectric Constant;2024-08-07