High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide-Reference-Cited by-同舟云学术

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Published:2017-05-25 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Guerriero Erica^ORCID,Pedrinazzi Paolo^ORCID,Mansouri Aida^ORCID,Habibpour Omid^ORCID,Winters Michael^ORCID,Rorsman Niklas^ORCID,Behnam Ashkan^ORCID,Carrion Enrique A.^ORCID,Pesquera Amaia^ORCID,Centeno Alba^ORCID,Zurutuza Amaia^ORCID,Pop Eric^ORCID,Zirath Herbert^ORCID,Sordan Roman^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-02541-2.pdf

Reference29 articles.

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3. Dorgan, V. E., Bae, M.-H. & Pop, E. Mobility and saturation velocity in graphene on SiO2. Appl. Phys. Lett. 97, 082112, doi: 10.1063/1.3483130 (2010).

4. Rizzi, L. G. et al. Cascading wafer-scale integrated graphene complementary inverters under ambient conditions. Nano Lett. 12, 3948–3953, doi: 10.1021/nl301079r (2012).

5. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech 5, 722–726, doi: 10.1038/nnano.2010.172 (2010).

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