High-<i>k</i> Monolayer CaF<sub>2</sub> as the Gate Dielectric for Two-Dimensional SiC-Based Field-Effect Transistors-Reference-Cited by-同舟云学术

High-k Monolayer CaF₂ as the Gate Dielectric for Two-Dimensional SiC-Based Field-Effect Transistors

Published:2023-09-11 Issue:9 Volume:5 Page:5082-5092
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Huang Lingqin¹,Liu Haoyu¹^ORCID,Cui Wenwen²

Affiliation:

1. School of Electrical Engineering and Automation, Jiangsu Normal University, Xuzhou 221116, China

2. Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China

Funder

Qinglan Project of Jiangsu Province of China

National Natural Science Foundation of China

Xuzhou Science and Technology Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00829

Reference50 articles.

1. MoS 2 transistors with 1-nanometer gate lengths

2. High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

3. Silicene field-effect transistors operating at room temperature

4. High-speed black phosphorus field-effect transistors approaching ballistic limit

5. Low Variability in Synthetic Monolayer MoS2 Devices

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