High-speed black phosphorus field-effect transistors approaching ballistic limit-Reference-Cited by-同舟云学术

High-speed black phosphorus field-effect transistors approaching ballistic limit

Published:2019-06-07 Issue:6 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Li Xuefei¹^ORCID,Yu Zhuoqing²^ORCID,Xiong Xiong¹^ORCID,Li Tiaoyang¹,Gao Tingting¹,Wang Runsheng²,Huang Ru²,Wu Yanqing¹²^ORCID

Affiliation:

1. Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

2. Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing 100871, China.

Abstract

Hole velocity in black phosphorus exceeds most other semiconductors at room temperature and is even higher at low temperatures.

Funder

National Natural Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference31 articles.

1. Performance potential and limit of MoS2 transistors;Li X.;Adv. Mater.,2015

2. Electronics based on two-dimensional materials;Fiori G.;Nat. Nanotechnol.,2014

3. Black phosphorus field-effect transistors

4. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

5. Device perspective for black phosphorus field-effect transistors: Contact resistance, ambipolar behavior, and scaling;Du Y.;ACS Nano,2014

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