Graphene/aluminum oxide interfaces for nanoelectronic devices

Abstract

Abstract In this work, we study theoretically and experimentally graphene/aluminum oxide interfaces as 0D/2D interfaces for quantum electronics as the nature of the interface is of paramount importance to understand the quantum transport mechanism. Indeed, the electronic transport is driven either by a channel arising from a strong hybridization at the interface, or by tunneling across a van der Waals interface, with very different electric characteristics. By combining electronic spectroscopy and scanning microscopy with density functional theory calculations, we show that the interface is of weak and van der Waals nature. Quantum transport measurements in a single electron transistor confirm this result. Our results provide a first insight into the interfacial properties van der Waals materials based single electron device, and the key role played by the control of the interface states. The weak van der Waals coupling reported is promising for single electron device, where the control of the environmental charges is known to be a key challenge towards applications. Moreover, the unique vertical device architecture, enabled by the dual role of graphene including its vertical electric field transparency, opens the doors for a new class of single electron devices with higher scaling capability and functionalities. This work paves the way to new atomic environment control in single electron device.