Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions-Reference-Cited by-同舟云学术

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Published:2023-11 Issue:11 Volume:70 Page:5977-5982
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ribero-Figueroa Xiomara¹^ORCID,Pacheco-Sanchez Anibal²^ORCID,Mansouri Aida³,Kumar Pankaj⁴,Habibpour Omid³^ORCID,Zirath Herbert³^ORCID,Sordan Roman⁴^ORCID,Pasadas Francisco⁵^ORCID,Jiménez David²^ORCID,Torres-Torres Reydezel¹^ORCID

Affiliation:

1. INAOE, Santa Maria Tonantzintla, Puebla, Mexico

2. Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, Spain

3. Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg, Sweden

4. Department of Physics, L-NESS, Politecnico di Milan, Como, Italy

5. Departamento de Electrónica y Tecnología de Computadores, Pervasive Electronics Advanced Research Laboratory (PEARL), Universidad de Granada, Granada, Spain

Funder

Consejo Nacional de Humanidades, Ciencias y Tecnologías (CONAHCyT), Mexico

European Union’s Horizon 2020 Research and Innovation Program

Ministerio de Ciencia, Innovación y Universidades

MCIU/AEI/FEDER, UE)

MCIN/AEI/FEDER, UE)

Junta de Andalucía–Consejería de Universidad, Investigación e Innovación-Project Energhene

Plan Andaluz de Investigación, Desarrollo e Innovación (PAIDI) 2020

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials