Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors-Reference-Cited by-同舟云学术

Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors

Published:2018-05-01 Issue:5 Volume:12 Page:5003-5010
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Xiaolong¹,Chen Chen¹,Levi Adi²,Houben Lothar³,Deng Bingchen¹,Yuan Shaofan¹,Ma Chao¹,Watanabe Kenji⁴,Taniguchi Takashi⁴,Naveh Doron²^ORCID,Du Xu⁵^ORCID,Xia Fengnian¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Yale University, 15 Prospect Street, Becton 519, New Haven, Connecticut 06511, United States

2. Faculty of Engineering and Bar-Ilan Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel

3. Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 76100 Israel

4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

5. Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, United States

Funder

Israel Science Foundation

Ministry of Education, Culture, Sports, Science and Technology

Office of Naval Research

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b02295

Reference42 articles.

1. Black phosphorus field-effect transistors

2. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

3. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

4. Electric field effect in ultrathin black phosphorus

5. Isolation and characterization of few-layer black phosphorus

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