All-2D materials-based 1T1M cells with threshold switching for electronic neurons-Reference-Cited by-同舟云学术

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All-2D materials-based 1T1M cells with threshold switching for electronic neurons

Published:2024-11 Issue: Volume:294 Page:112247
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Yuan Bin,Zhu Kaichen,Han Tingting,Pazos Sebastian,Lanza Mario

Funder

Key Technologies Research and Development Program

National Natural Science Foundation of China

National Key Research and Development Program of China

King Abdullah University of Science and Technology

Science and Technology Development Fund

Publisher

Elsevier BV

Reference26 articles.

1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal;Watanabe;Nat. Mater.,2004

2. Variability and yield in h-BN-based memristive circuits: The role of each type of defect;Shen;Adv. Mater.,2021

3. Graphene field-effect transistors based on boron-nitride dielectrics;Meric;Proce. IEEE.,2013

4. Capacitance-voltage characteristics of Pt/hBN/WSe2 metal-insulator-semiconductor capacitor doped by charge-transfer process;Im;Appl. Phys. Lett.,2022

5. Electronic synapses made of layered two-dimensional materials;Shi;Nat. Electron.,2018

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