Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics-Reference-Cited by-同舟云学术

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Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics

Published:2013-07 Issue:7 Volume:101 Page:1609-1619
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Meric Inanc,Dean Cory R.,Petrone Nicholas,Wang Lei,Hone James,Kim Philip,Shepard Kenneth L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/5/6532325/06516044.pdf?arnumber=6516044

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