Large‐Scale p‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe2

Abstract

AbstractTransition metal dichalcogenides (TMDCs) based large‐scale p‐type floating‐gate field‐effect transistor (FGFET) memory array has been fabricated for the first time. Chemical‐vapor‐deposition grown seamless co‐planes 2H‐ and 1T′‐MoTe2 serve as the channel and source/drain electrodes, respectively. High‐κ Al2O3 layers act as the tunneling and blocking layers. Arrayed Pd/Au serves as floating and top gates. The overall performances of the devices are excellent among those of the reported TMDCs‐based FGFET memories. Typical device exhibits large memory windows of ≈11.5 and 2.8 V and on/off ratios of ≈104 and 103 in gate voltage sweep ranges of ±10 and ±5 V, respectively, with long retention time of more than 105 s and good stress endurance of more than 5 × 104 programming/erasing cycles. The conductance of the device can be precisely tuned by applying short potentiative and depressive ±5 V voltage pulses. The device yields are 100% and 93% under ±10 and ±5 V, respectively. The whole fabrication process is free from the transfer process and compatible with traditional silicon technology. This work paves the way for the application of TMDCs in large‐scale integrated circuits.