Time-of-Flight SIMS depth profiling and imaging of the interface of Al contact to n-type 4H silicon carbide-Reference-Cited by-同舟云学术

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Time-of-Flight SIMS depth profiling and imaging of the interface of Al contact to n-type 4H silicon carbide

Published:2012-06-08 Issue:1 Volume:45 Page:381-385
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Rogowski Jacek¹,Kubiak Andrzej²

Affiliation:

1. Institute of General and Ecological Chemistry; Technical University of Lodz; ul. Zeromskiego 116; 90-924; Lodz; Poland

2. Department of Semiconductor and Optoelectronic Devices; Technical University of Lodz; ul. Wolczanska 211/215; 90-924; Lodz; Poland

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference23 articles.

1. A critical review of ohmic and rectifying contacts for silicon carbide

2. Silicon carbide high-power devices

3. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

4. Commercial SiC device processing: Status and requirements with respect to SiC based power devices

5. Formation of ohmic contacts to α-SiC and their impact on devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the depth resolution for profiling SiO 2 /SiC interfaces by dual‐beam TOF‐SIMS combined with etching;Surface and Interface Analysis;2019-04-17

2. Defects induced by solid state reactions at the tungsten-silicon carbide interface;Journal of Applied Physics;2018-04-28

3. Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C—SiC;Chinese Physics B;2014-05-30

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