Formation of ohmic contacts to α-SiC and their impact on devices-Reference-Cited by-同舟云学术

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Formation of ohmic contacts to α-SiC and their impact on devices

Published:2001-10 Issue:10 Volume:30 Page:1353-1360
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Madsen Lynnette D.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-001-0124-x.pdf

Reference57 articles.

1. C.I. Harris and A.O. Konstantinov, Physica Scripta T79, 271 (1999).

2. http://www.liv.ac.uk/EEE/ssg/power.htm

3. N. Mohan, T.M. Undeland, and W.P. Robbins, Power Electronics: Converters, Applications and Design, 2nd edition (New York: Wiley, 1995).

4. P. Antognetti, editorl, Power Integrated Circuits (New York: McGraw-Hill, 1986).

5. B.K. Bose, editor, Power Electronics and Variable Frequency Drives: Technology and Applications (Piscataway, NJ: IEEE Press, 1997).

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2. Effect of Ti3SiC2 formation on p-type GaN by vacuum annealing on the contact properties;IOP Conference Series: Materials Science and Engineering;2014-08-01

3. Nucleation and growth of Ti3SiC2on SiC by interfacial reaction;IOP Conference Series: Materials Science and Engineering;2014-08-01

4. Nickel-titanium-based contact for n-type silicon carbide to combine high ohmic conductivity and mechanical properties;IOP Conference Series: Materials Science and Engineering;2014-08-01

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