Nickel-titanium-based contact for n-type silicon carbide to combine high ohmic conductivity and mechanical properties
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/61/i=1/a=012031/pdf
Reference17 articles.
1. Formation of ohmic contacts to α-SiC and their impact on devices
2. A critical review of ohmic and rectifying contacts for silicon carbide
3. Contact formation in SiC devices
4. Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC
5. Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC
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1. Analysis of energy density and scanning speed impacts on Ni/SiC ohmic contacts during laser annealing;Materials Science in Semiconductor Processing;2024-12
2. Crystallization of Ni50Ti50 metallic glass ribbon in the concept of multifractal formalism;Phase Transitions;2022-06-14
3. Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate;Journal of Applied Physics;2022-02-14
4. Effect of SiC crystal orientation on Ti3SiC2formation between SiC and Al/Ti bi-layered film;Ceramics International;2021-03
5. Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer;Materials Science Forum;2018-06
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