Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate-Reference-Cited by-同舟云学术

Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate

Published:2022-02-14 Issue:6 Volume:131 Page:065108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ding Jianwen¹²^ORCID,Li Xin¹²,Yang Kaiming¹²^ORCID,Zhu Yu¹²,Chen Jing³,Zhang Chengpeng³,He Longchao³

Affiliation:

1. State Key Laboratory of Tribology, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China

2. Beijing Key Laboratory of Precision/Ultra-Precision Manufacturing Equipments and Control, Tsinghua University, Beijing 100084, China

3. Beijing U-precision Tech Co., Ltd., Beijing 100176, China

Funder

National Science and Technology Major Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076822

Reference35 articles.

1. Trends in power semiconductor devices

2. Fundamentals of Silicon Carbide Technology

3. Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

4. R. Rupp, R. Kern, and R. Gerlach, in Proceedings of the 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Kanazawa, Japan (IEEE, 2013), pp. 51–54.

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