Analytical model of subthreshold swing of a gate and channel engineered double gate MOSFET
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering; Bangladesh University of Engineering and Technology; Dhaka Bangladesh
2. School of Photovoltaic and Renewable Energy Engineering; University of New South Wales; Sydney Australia
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Reference27 articles.
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3. Symmetric DG-MOSFET with gate and channel engineering: A 2-D simulation study;Pradhan;Microelectronics and Solid State Electron,2013
4. Analytical study of dual material surrounding gate MOSFET to suppress short-channel effects (SCEs);Pal;Int J Eng Sci Technol,2014
5. Asymmetric halo and symmetric single-halo dual-material gate and double-halo dual-material gate n-MOSFETs characteristic parameter modeling;Sarkar;Int J Numer Modell Electron Networks Devices Fields,2013
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1. Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach;Silicon;2020-11-16
2. Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-08-06
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