Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance-Reference-Cited by-同舟云学术

Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

Published:2020-08-06 Issue:1 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model El

Author:

Suddapalli Subba Rao¹^ORCID,Nistala Bheema Rao¹

Affiliation:

1. Department of ECE NIT Warangal Telangana India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2791

Reference36 articles.

1. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

2. HoytJL NayfehHM EguchiS AbergI XiaG DrakeT FitzgeraldEA AntoniadisDA Strained silicon MOSFET technology. Paper presented at:Digest International Electron Devices Meeting Dec2002 pp. 23–26.

3. Strained-Si Channel Super-Self-Aligned Back-Gate/Double-Gate Planar Transistors

4. New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology

5. Electron transport in thin SOI, strained-SOI and GeOI MOSFET by Monte-Carlo simulation

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2. Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges;Journal of Computational Electronics;2022-01-15

3. Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges;Silicon;2021-10-29

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