Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach
Author:
Funder
Department of Science and Technology, Government of India
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00823-5.pdf
Reference16 articles.
1. F. D’Agostino and D. Quercia, “Short-channel effects in MOSFETs,” In: Proc. Introduction VLSI Design (EECS 467), Dec. 2000, pp. 1–15
2. Mahmud MA, Subrina S (2017) Analytical model of subthreshold swing of a gate and channel engineered double gate MOSFET. Int J Numer Model 30:e2235. https://doi.org/10.1002/jnm.2235
3. Sanjay PB, Vohra A (2020) Metal gate electrode, channel and gate oxide engineering to improve DC and analog/RF performance of double-gate MOSFET for high-speed applications. Appl. Phys. A 126:400. https://doi.org/10.1007/s00339-020-03576-5
4. Gupta N, Chaujar R (2016) Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers. Appl Phys A Mater Sci Process 122:717. https://doi.org/10.1007/s00339-016-0239-9
5. Md. Arafat Mahmud and Samia Subrina, "two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET", J Comput Electron, June 2016, Volume 15, Issue 2, pp. 525–536
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